q?v~zy??q?v?_rb]??qcabfq HFW50N06A bv dss = 60 v r ds(on) typ = 18 p
i d = 50 a HFW50N06A 60v n-channel mosfet 1.gate 2. drain 3. source absolute maximum ratings t c =25 e unless otherwise specified symbol parameter value units v dss drain-source voltage 60 v i d drain current ? continuous (t c = 25 e ) 50 a drain current ? continuous (t c = 100 e ) 35.4 a i dm drain current ? pulsed 200 a v gs gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 490 mj i ar avalanche current (note 1) 50 a e ar repetitive avalanche energy (note 1) 12 mj p d power dissipation (t a = 25 e ) * 3.75 w power dissipation (t c = 25 e ) - derate above 25 e 120 w 0.8 w/ e t j , t stg operating and storage temperature range -55 to +175 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 1.24 e /w r ja junction-to-ambient * -- 40 r ja junction-to-ambient -- 62.5 oct 2015 ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 27 nc (typ.) ? extended safe operating area ? lower r ds(on) :
(typ.) @v gs =10v ? 100% avalanche tested features * when mounted on the minimum pad size recommended (pcb mount) 2 1 3 d 2 -pak
q?v~zy??q?v?_rb]??qcabfq HFW50N06A electrical characteristics t j =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 50 a i sm pulsed source-drain diode forward current -- -- 200 v sd source-drain diode forward voltage i s = 50 a, v gs = 0 v -- -- 1.5 v trr reverse recovery time i s = 50 a, v gs = 0 v di f /dt = 100 a/ v -- 45 -- qrr reverse recovery charge -- 70 -- & bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 60 -- -- v i dss zero gate voltage drain current v ds = 60 v, v gs = 0 v -- -- 1 3 v ds = 48 v, t j = 125 e -- -- 10 3 i gss gate-body leakage current v gs = 25 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1290 1675 ? c oss output capacitance -- 445 580 ? c rss reverse transfer capacitance -- 84 110 ? dynamic characteristics t d(on) turn-on time v ds = 30 v, i d = 25 a, r g = 25 ? -- 15 40 t r turn-on rise time -- 105 220 t d(off) turn-off delay time -- 80 180 t f turn-off fall time -- 85 180 q g total gate charge v ds = 48 v, i d = 50 a v gs = 10 v -- 27 34 nc q gs gate-source charge -- 5.0 -- nc q gd gate-drain charge -- 10.2 -- nc switching characteristics source-drain diode maximum ratings and characteristics notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=230 h, i as =50a, v dd =25v, r g =25 : , starting t j =25 q c 3. pulse test : pulse width ? v ' x w \ & \ f o h ? 4. essentially independent of operating temperature on characteristics v gs gate threshold voltage v ds = v gs , i d = 250 3 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 25 a -- 18 22 m ? g fs forward transconductance v ds = 25 v, i d = 25 a -- 22 -- s
q?v~zy??q?v?_rb]??qcabfq HFW50N06A typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics
q?v~zy??q?v?_rb]??qcabfq HFW50N06A typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve t 2 t 1 p dm 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 1.24 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec]
q?v~zy??q?v?_rb]??qcabfq HFW50N06A fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_rb]??qcabfq HFW50N06A fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_rb]??qcabfq HFW50N06A package dimension k y t w h r g o { v t y ] z p g
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